Lectures and Presentations about Tri Chemical Laboratories’ R&D are introduced below.
September 21, 2018 at Nagoya
| Title |
SiO2 deposition by low-temperature ALD using SiBr4 |
| Presented |
The 79th JSAP Autumn Meeting |
October 8, 2008 at The University of Tokyo
| Title |
Realization of High Stable Porous SiOCH Films (k=2.3-2.4, Er=8.0 GPa) using DcPDMOS by O2 Addition and UV Cure |
| Presented |
Advanced Metallization Conference 2008: 18th Asian Session |
September 23, 2008 at San Diego, U.S.A
| Title |
Realization of High Stable Porous SiOCH Films (k=2.3-2.4, Er=8.0 GPa) using DcPDMOS by O2 Addition and UV Cure |
| Presented |
Advanced Metallization Conference 2008 (AMC) 2008 |
October 23, 2007 at The University of Tokyo
| Title |
Chemical Vapor Deposition of Ni-Pt thin film using Pt(PF3)4 and Ni(PF3)4 |
| Presented |
ADMETA 2007 17th Asian Session |
October 6, 2007 at Meiji University
| Title |
Deposition of a Ni-Pt thin film by CVD using Pt(PF3)4/Ni(PF3)4 |
| Presented |
Workshop at the Institute of Cutting-edge Semiconductor Research |
October 18, 2006 at San Diego, U.S.A
| Title |
W-CVD using biscyclopentadienyltungsten system |
| Presented |
Advanced Metallization Conference 2006 (AMC) 2006 |
September 26, 2006 at Tokyo, Japan
| Title |
Properties of chemical reaction during Ni and Ni-silicide deposition using Ni(PF3)4 and Si3H8 |
| Presented |
Advanced Metallization Conference 2006 (ADMETA2006) |
September 5, 2006 at Tokyo, Japan
| Title |
Properties of Ni and Ni-silicide deposition using Ni(PF3)4 and Si3H8 |
| Presented |
International Workshop on Sustainable Energy and Materials (IWSEM2006) |
September 5, 2006 at Tokyo, Japan
| Title |
W-CVD using (i-PrCp)2WH2 |
| Presented |
International Workshop on Sustainable Energy and Materials (IWSEM2006) |
August 31, 2006 at Ritsumeikan University
| Title |
Formation of a Ni-silicide by CVD (II) |
| Presented |
The 67th JSAP Meeting |
July 30, 2006 at kyoto, Japan
| Title |
Chemical Vapor Deposition of NiSi using Ni(PF3)4 and Si3H8 |
| Presented |
Asia-Pacific Conference on Semiconducting Silicide 2006 (APAC-silicide 2006) |
April 18, 2006 at San Francisco, CA
| Title |
Ultra Low-k Film Deposition By PECVD Using a Novel Organosilane as a Precursor |
| Presented |
2006 MRS Spring Meeting |
March 24, 2006 at Musashi Institute of Technology
| Title |
Formation of a Ni-silicide by CVD |
| Presented |
The 53rd JSAP Associate Meeting |
November 29, 2005 at Cheju, Korea
| Title |
Ni-silicide precursor for gate electrodes |
| Presented |
27th International Symposium of Dry Process (DPS2006) |
October 13, 2005 at Tokyo, Japan
| Title |
Chemical Vapor Deposition of Ni-silicide for gate electrodes |
| Presented |
Advanced Metallization Conference 2005 (ADMETA2005) |
September 14, 2005 at Kobe, Japan
| Title |
Composition control of Ni-silicide by CVD using Ni(PF3)4 and Si3H8 |
| Presented |
The 2005 International Conference on Solid State Devices and Materials (SSDM 2005) |
September 10, 2005 at Tokushima University
| Title |
Deposition of Ni-silicide gate electrodes by CVD |
| Presented |
The 66th JSAP Meeting, |
September 10, 2005 at Tokushima University
| Title |
Liquid CVD material (i-PrCp) 2WH2 for W deposition |
| Presented |
The 67th JSAP Meeting, |
September 7, 2005 at Tokushima University
| Title |
Deposition of a Low-k thin film by PECVD using a new Si compound |
| Presented |
The 66th JSAP Meeting |
May 17, 2005 at Quebec, Canada
| Title |
Nickel thin film deposition using Ni(PF3)4 for LSI electrode |
| Presented |
207th meeting of Electrochemical society (ECS) |
April 1, 2005 at Saitama University
| Title |
Deposition of a Ni thin film using Ni(PF3)4 (II) |
| Presented |
The 52nd JSAP Associate Meeting |
September 29, 2004 at Tokyo, Japan
| Title |
Ni Thin Film Deposition using tetrakistrifluorophosphinenickel (0), Ni(PF3)4 |
| Presented |
Advanced Metallization Conference 2004 (ADMETA2004) |
September 2, 2004 at Tohoku Gakuin University
| Title |
Deposition of a Ni thin film using Ni(PF3)4 |
| Presented |
The 65th JSAP Meeting |
August 9, 2004 at Grenoble, France
| Title |
Surface reactions in Ni MOCVD using cyclopentadienylallylnickel as a precursor |
| Presented |
14th International Conference on Crystal Growth (ICCG-14) |
March 28, 2004 at Tokyo University of Technology
| Title |
Ni deposition by MOCVD |
| Presented |
The 51st JSAP Associate Meeting |
September 17, 2003 at Tokyo, Japan
| Title |
Ni precursor for chemical vapor deposition of NiSi |
| Presented |
The 2003 International Conference on Solid State Devices and Materials (SSDM 2003) |
August 31, 2003 at Fukuoka University
| Title |
NiSi(II) deposition by MOCVD |
| Presented |
The 64th JSAP Meeting |
October 30, 2002 at Tokyo, Japan
| Title |
Organometallic Hf and Si precursors for Hf1-XSi XO2 thin film formation |
| Presented |
Advanced Metallization Conference 2002 (ADMETA2002) |
August 20, 2002 at Seoul, Korea
| Title |
Organometallic Hf and Si precursors for HfSiO2-CVD and ALD process |
| Presented |
Atomic Layer Deposition Conference (ALD2002) |
October 30, 2001 at Tokyo, Japan
| Title |
HfO2 and Hf1-xSixO2 deposition by MOCVD using TDEAH |
| Presented |
Advanced Metallization Conference 2001 (ADMETA2001) |
September 2, 2001 at Aichi Institute of Technology
| Title |
Deposition of a HfO2 film by MOCVD (III) |
| Presented |
The 62nd JSAP Meeting |
