Lectures and Presentations
Lectures and presentations about Tri Chemical Laboratories’ R&D are introduced below.
| Title | SiO2 deposition by low-temperature ALD using SiBr4 |
|---|---|
| Presented | The 79th JSAP Autumn Meeting |
| September 21, 2018 at Nagoya | |
| Title | Realization of High Stable Porous SiOCH Films (k=2.3-2.4, Er=8.0 GPa) using DcPDMOS by O2 Addition and UV Cure |
| Presented | Advanced Metallization Conference 2008: 18th Asian Session |
| October 8, 2008 at The University of Tokyo | |
| Title | Realization of High Stable Porous SiOCH Films (k=2.3-2.4, Er=8.0 GPa) using DcPDMOS by O2 Addition and UV Cure |
| Presented | Advanced Metallization Conference 2008: 18th Asian Session |
| October 8, 2008 at The University of Tokyo | |
| Title | Realization of High Stable Porous SiOCH Films (k=2.3-2.4, Er=8.0 GPa) using DcPDMOS by O2 Addition and UV Cure |
| Presented | Advanced Metallization Conference 2008 (AMC) 2008 |
| September 23, 2008 at San Diego, U.S.A | |
| Title | Chemical Vapor Deposition of Ni-Pt thin film using Pt(PF3)4 and Ni(PF3)4 |
| Presented | ADMETA 2007 17th Asian Session |
| October 23, 2007 at The University of Tokyo | |
| Title | Deposition of a Ni-Pt thin film by CVD using Pt(PF3)4/Ni(PF3)4 |
| Presented | Workshop at the Institute of Cutting-edge Semiconductor Research |
| October 6, 2007 at Meiji University | |
| Title | W-CVD using biscyclopentadienyltungsten system |
| Presented | Advanced Metallization Conference 2006 (AMC) 2006 |
| October 18, 2006 at San Diego, U.S.A | |
| Title | Properties of chemical reaction during Ni and Ni-silicide deposition using Ni(PF3)4 and Si3H8 |
| Presented | Advanced Metallization Conference 2006 (ADMETA2006) |
| September 26, 2006 at Tokyo, Japan | |
| Title | Properties of Ni and Ni-silicide deposition using Ni(PF3)4 and Si3H8 |
| Presented | International Workshop on Sustainable Energy and Materials (IWSEM2006) |
| September 5, 2006 at Tokyo, Japan | |
| Title | W-CVD using (i-PrCp)2WH2 |
| Presented | International Workshop on Sustainable Energy and Materials (IWSEM2006) |
| September 5, 2006 at Tokyo, Japan | |
| Title | Formation of a Ni-silicide by CVD (II) |
| Presented | The 67th JSAP Meeting |
| August 31, 2006 at Ritsumeikan University | |
| Title | Chemical Vapor Deposition of NiSi using Ni(PF3)4 and Si3H8 |
| Presented | Asia-Pacific Conference on Semiconducting Silicide 2006 (APAC-silicide 2006) |
| July 30, 2006 at kyoto, Japan | |
| Title | Ultra Low-k Film Deposition By PECVD Using a Novel Organosilane as a Precursor |
| Presented | 2006 MRS Spring Meeting |
| April 18, 2006 at San Francisco, CA | |
| Title | Formation of a Ni-silicide by CVD |
| Presented | The 53rd JSAP Associate Meeting |
| March 24, 2006 at Musashi Institute of Technology | |
| Title | Ni-silicide precursor for gate electrodes |
| Presented | 27th International Symposium of Dry Process (DPS2006) |
| November 29, 2005 at Cheju, Korea | |
| Title | Chemical Vapor Deposition of Ni-silicide for gate electrodes |
| Presented | Advanced Metallization Conference 2005 (ADMETA2005) |
| October 13, 2005 at Tokyo, Japan | |
| Title | Composition control of Ni-silicide by CVD using Ni(PF3)4 and Si3H8 |
| Presented | The 2005 International Conference on Solid State Devices and Materials (SSDM 2005) |
| September 14, 2005 at Kobe, Japan | |
| Title | Deposition of Ni-silicide gate electrodes by CVD |
| Presented | The 66th JSAP Meeting |
| September 10, 2005 at Tokushima University | |
| Title | Liquid CVD material (i-PrCp) 2WH2 for W deposition |
| Presented | The 67th JSAP Meeting |
| September 10, 2005 at Tokushima University | |
| Title | Deposition of a Low-k thin film by PECVD using a new Si compound |
| Presented | The 66th JSAP Meeting |
| September 7, 2005 at Tokushima University | |
| Title | Nickel thin film deposition using Ni(PF3)4 for LSI electrode |
| Presented | 207th meeting of Electrochemical society (ECS) |
| May 17, 2005 at Quebec, Canada | |
| Title | Deposition of a Ni thin film using Ni(PF3)4 (II) |
| Presented | The 52nd JSAP Associate Meeting |
| April 1, 2005 at Saitama University | |
| Title | Ni Thin Film Deposition using tetrakistrifluorophosphinenickel (0), Ni(PF3)4 |
| Presented | Advanced Metallization Conference 2004 (ADMETA2004) |
| September 29, 2004 at Tokyo, Japan | |
| Title | Deposition of a Ni thin film using Ni(PF3)4 |
| Presented | The 65th JSAP Meeting |
| September 2, 2004 at Tohoku Gakuin University | |
| Title | Surface reactions in Ni MOCVD using cyclopentadienylallylnickel as a precursor |
| Presented | 14th International Conference on Crystal Growth (ICCG-14) |
| August 9, 2004 at Grenoble, France | |
| Title | Ni deposition by MOCVD |
| Presented | The 51st JSAP Associate Meeting |
| March 28, 2004 at Tokyo University of Technology | |
| Title | Ni precursor for chemical vapor deposition of NiSi |
| Presented | The 2003 International Conference on Solid State Devices and Materials (SSDM 2003) |
| September 17, 2003 at Tokyo, Japan | |
| Title | NiSi(II) deposition by MOCVD |
| Presented | The 64th JSAP Meeting |
| August 31, 2003 at Fukuoka University | |
| Title | Organometallic Hf and Si precursors for Hf1-XSi XO2 thin film formation |
| Presented | Advanced Metallization Conference 2002 (ADMETA2002) |
| October 30, 2002 at Tokyo, Japan | |
| Title | Organometallic Hf and Si precursors for HfSiO2-CVD and ALD process |
| Presented | Atomic Layer Deposition Conference (ALD2002) |
| August 20, 2002 at Seoul, Korea | |
| Title | HfO2 and Hf1-xSixO2 deposition by MOCVD using TDEAH |
| Presented | Advanced Metallization Conference 2001 (ADMETA2001) |
| October 30, 2001 at Tokyo, Japan | |
| Title | Deposition of a HfO2 film by MOCVD (III) |
| Presented | The 62nd JSAP Meeting |
| September 2, 2001 at Aichi Institute of Technology | |